Analysis and Justi cation of a Simple, Practical 2 1/2-D Capacitance Extraction Methodology

نویسندگان

  • Jason Cong
  • Lei He
  • Andrew B. Kahng
  • David Noice
  • Nagesh Shirali
  • Steve H.-C. Yen
چکیده

This paper addresses post-routing capacitance extraction during performance-driven layout. We rst show how basic drivers in process technology (planarization and minimum metal density requirements) actually simplify the extraction problem; we do this by proposing and validating ve \foundations" through detailed experiments with representative 0:18 m process parameters and a 3-D eld solver. We then present a simple yet accurate 2 1/2-D extraction methodology directly based on the foundations. This methodology has been productized and is being shipped with the Cadence Silicon Ensemble 5.0 product. We conclude that the 2 1/2-D approach has su cient accuracy for current and near-term process generations.

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تاریخ انتشار 1997